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| APTGT600SK60G Buck chopper Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 VCES = 600V IC = 600A* @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant E1 OUT CR2 0/VBUS G1 E1 VBUS 0/VBUS OUT Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Reverse Bias Safe Operating Area 1200A @ 550V * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT600SK60G - Rev 1 June, 2006 Max ratings 600 700 * 600 * 800 20 2300 Unit V A V W APTGT600SK60G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 600A Tj = 150C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.4 1.5 5.8 Max 750 1.8 6.5 800 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 600A R G = 2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 600A R G = 2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 600A Tj = 25C R G = 2 Tj = 150C Min Typ 49 3.1 1.5 130 55 250 60 145 60 320 80 3 5.5 17 21 Max Unit nF ns ns mJ mJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 350 550 Unit V A A IF = 600A VGE = 0V di/dt =5000A/s mJ www.microsemi.com 2-6 APTGT600SK60G - Rev 1 June, 2006 IF = 600A VR = 300V 600 1.5 1.4 120 210 27 57 6.9 14.1 1.9 V ns C APTGT600SK60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.065 0.11 175 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT600SK60G - Rev 1 www.microsemi.com 3-6 June, 2006 APTGT600SK60G Typical Performance Curve 1200 1000 IC (A) Output Characteristics (VGE=15V) TJ =25C TJ=125C Output Characteristics 1200 T J = 150C 1000 VGE =19V T J=150C VGE =13V VGE =15V VGE =9V 800 600 400 200 800 IC (A) 600 400 200 TJ=25C 0 0 0.5 1 1.5 V CE (V) 2 2.5 0 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 1200 1000 800 600 400 Transfert Characteristics T J=25C Energy losses vs Collector Current 40 35 30 E (mJ) 25 20 15 10 VCE = 300V VGE = 15V RG = 1 T J = 150C Eoff Er IC (A) T J=125C T J=150C 200 0 5 6 7 8 V GE (V) 9 T J=25C 5 0 11 0 200 400 600 IC (A) 800 Eon 10 1000 1200 Switching Energy Losses vs Gate Resistance 40 V CE = 300V V GE =15V I C = 600A T J = 150C Reverse Bias Safe Operating Area 1400 1200 Eoff Eon 30 E (mJ) 1000 IC (A) 800 600 400 200 0 6 0 V GE=15V T J=150C RG=1 20 10 Eon Er 0 0 1 2 3 4 5 Gate Resistance (ohms) 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3 IGBT 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT600SK60G - Rev 1 June, 2006 APTGT600SK60G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 200 400 600 IC (A) 800 1000 Hard switching ZCS ZVS VCE=300V D=50% RG=1 TJ =150C Forward Characteristic of diode 1200 1000 800 IF (A) 600 400 200 0 0 0.4 0.8 1.2 V F (V) 1.6 2 T J=125C TJ=150C T J=25C Tc=85C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-6 APTGT600SK60G - Rev 1 June, 2006 APTGT600SK60G www.microsemi.com 6-6 APTGT600SK60G - Rev 1 June, 2006 |
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